Micron Technology 8ATF1G64HZ-3G2R1 8GB vs Samsung M471A1K43EB1-CWE 8GB

总分

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

总分

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

差异规格评论

差异

Micron Technology 8ATF1G64HZ-3G2R1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-3G2R1 8GB

报告一个错误

更快的写入速度，GB/s

12.5 12.4

测试中的平均数值

Samsung M471A1K43EB1-CWE 8GB

需要考虑的原因
Samsung M471A1K43EB1-CWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

46 51

左右 -11% 更低的延时
更快的读取速度，GB/s

16 15.8

测试中的平均数值

规格

完整的技术规格清单

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Samsung M471A1K43EB1-CWE 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

51 46
读取速度，GB/s

15.8 16.0
写入速度，GB/s

12.5 12.4
内存带宽，mbps

25600 25600

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2570 2660

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK16GX4M4B3866C18 4GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Samsung M471A1G43EB1-CPB 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

Kingmax Semiconductor GSAF62F-D8---------- 4GB

Kingmax Semiconductor GSAF62F-D8---------- 4GB

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SK Hynix HYMP112U64CP8-Y5 1GB

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G Skill Intl F4-4000C19-16GTZSW 16GB

G Skill Intl F4-4000C19-16GTZSW 16GB