SK Hynix HYMP112U64CP8-Y5 1GB vs Micron Technology 4ATF1G64HZ-3G2E1 8GB

总分

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

总分

Micron Technology 4ATF1G64HZ-3G2E1 8GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

4 15.1

测试中的平均数值

Micron Technology 4ATF1G64HZ-3G2E1 8GB

需要考虑的原因
Micron Technology 4ATF1G64HZ-3G2E1 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 62

左右 -77% 更低的延时
更快的写入速度，GB/s

9.6 1,658.4

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-Y5 1GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 35
读取速度，GB/s

4,216.7 15.1
写入速度，GB/s

1,658.4 9.6
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

688 2502

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Samsung M471B5173QH0-YK0 4GB

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Mushkin MR[ABC]4U320GJJM8G 8GB

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Crucial Technology BL16G32C16S4B.M8FB1 16GB

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G Skill Intl F4-3200C16-32GTZN 32GB

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Ramaxel Technology RMUA5110MD78HAF-2666 8GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

A-DATA Technology AO1P26KC8T1-BXPS 8GB

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Samsung 1600 CL10 Series 8GB

Samsung M391A1K43BB1-CRC 8GB

Samsung M391A1K43BB1-CRC 8GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB