Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Micron Technology 4ATF1G64HZ-3G2E1 8GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

Micron Technology 4ATF1G64HZ-3G2E1 8GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 35

左右 17% 更低的延时
更快的读取速度，GB/s

16.9 15.1

测试中的平均数值
更快的写入速度，GB/s

12.0 9.6

测试中的平均数值

Micron Technology 4ATF1G64HZ-3G2E1 8GB

需要考虑的原因
Micron Technology 4ATF1G64HZ-3G2E1 8GB

报告一个错误

更高的内存带宽，mbps

25600 19200

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 35
读取速度，GB/s

16.9 15.1
写入速度，GB/s

12.0 9.6
内存带宽，mbps

19200 25600

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2601 2502

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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TwinMOS 8DPT5MK8-TATP 2GB

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G Skill Intl F4-3600C16-16GTRG 16GB

Corsair CMSX32GX4M2A3200C22 16GB

Corsair CMSX32GX4M2A3200C22 16GB

Crucial Technology BLS4G4D26BFSC.8FE 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Samsung M471B5273DH0-CH9 4GB

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Kingston KHX2400C15/16G 16GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

SK Hynix HMA84GL7MMR4N-TF 32GB

SK Hynix HMA84GL7MMR4N-TF 32GB