Crucial Technology CT51264BD160B.C16F 4GB vs Netac Technology Co Ltd EKBLACK4083016A 8GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Netac Technology Co Ltd EKBLACK4083016A 8GB

Netac Technology Co Ltd EKBLACK4083016A 8GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

Netac Technology Co Ltd EKBLACK4083016A 8GB

需要考虑的原因
Netac Technology Co Ltd EKBLACK4083016A 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 41

左右 -105% 更低的延时
更快的读取速度，GB/s

19.7 13.9

测试中的平均数值
更快的写入速度，GB/s

15.5 9.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Netac Technology Co Ltd EKBLACK4083016A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 20
读取速度，GB/s

13.9 19.7
写入速度，GB/s

9.7 15.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2366 3404

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Netac Technology Co Ltd EKBLACK4083016A 8GB

Netac Technology Co Ltd EKBLACK4083016A 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Ramaxel Technology RMUA5110MB78HAF2400 8GB

Ramaxel Technology RMUA5110MB78HAF2400 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

SK Hynix HMA81GS6DJR8N-VK 8GB

SK Hynix HMA81GS6DJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

SK Hynix HMA81GU6DJR8N-XN 8GB

SK Hynix HMA81GU6DJR8N-XN 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

SK Hynix HMA451S6AFR8N-TF 4GB

SK Hynix HMA451S6AFR8N-TF 4GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Kingston HP26D4U9D8ME-16X 16GB

Kingston HP26D4U9D8ME-16X 16GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

G Skill Intl F4-2800C15-8GVSB 8GB

G Skill Intl F4-2800C15-8GVSB 8GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology BL8G30C15U4BL.M8FE1 8GB

Crucial Technology BL8G30C15U4BL.M8FE1 8GB

Crucial Technology CT8G4DFRA266.C4FE 8GB

Crucial Technology CT8G4DFRA266.C4FE 8GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology BLS16G4D26BFSC.16FBD 16GB

Crucial Technology BLS16G4D26BFSC.16FBD 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Crucial Technology BLS4G4D240FSE.8FE 4GB

Crucial Technology BLS4G4D240FSE.8FE 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB