RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Avant Technology J642GU42J5213N1 16GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Avant Technology J642GU42J5213N1 16GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Avant Technology J642GU42J5213N1 16GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更快的读取速度,GB/s
15.6
14.6
测试中的平均数值
更快的写入速度,GB/s
11.8
10.1
测试中的平均数值
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
Avant Technology J642GU42J5213N1 16GB
报告一个错误
低于PassMark测试中的延时,ns
27
51
左右 -89% 更低的延时
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Avant Technology J642GU42J5213N1 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
27
读取速度,GB/s
15.6
14.6
写入速度,GB/s
11.8
10.1
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2687
2577
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Avant Technology J642GU42J5213N1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378B5273DH0-CH9 4GB
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
A-DATA Technology VDQVE1B16 2GB
Mushkin MR[ABC]4U360JNNM8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMSX16GX4M2A3000C16 8GB
Micron Technology 16KTF1G64HZ-1G9E2 8GB
Crucial Technology CT16G4SFD8213.C16FAD 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
Samsung M3 78T2863EHS-CF7 1GB
Wilk Elektronik S.A. GR2666S464L19/16G 16GB
Kingston 99U5584-001.A00LF 4GB
Essencore Limited IM48GU48N24-FFFHM 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston ACR21D4S15HAG/8G 8GB
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
Corsair CMX8GX3M2A2000C9 4GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CMRX8GD3000C16R4D 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT8G4DFS8213.M8FH 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston 9905743-045.A00G 16GB
报告一个错误
×
Bug description
Source link