Samsung M3 78T2863EHS-CF7 1GB vs Wilk Elektronik S.A. GR2666S464L19/16G 16GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Wilk Elektronik S.A. GR2666S464L19/16G 16GB

Wilk Elektronik S.A. GR2666S464L19/16G 16GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 15.8

测试中的平均数值
更快的写入速度，GB/s

2,123.3 13.7

测试中的平均数值

Wilk Elektronik S.A. GR2666S464L19/16G 16GB

需要考虑的原因
Wilk Elektronik S.A. GR2666S464L19/16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

40 59

左右 -48% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Wilk Elektronik S.A. GR2666S464L19/16G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 40
读取速度，GB/s

4,833.8 15.8
写入速度，GB/s

2,123.3 13.7
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

731 2959

RAM Latency Calculator

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RAM 2

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology CT8G4SFS824A.M8FE 8GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Crucial Technology CT8G4SFRA32A.C4FE 8GB

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SK Hynix HMA451R7AFR8N-TF 4GB

SK Hynix HMA451R7AFR8N-TF 4GB