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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Avant Technology W6451U66J9266ND 4GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Avant Technology W6451U66J9266ND 4GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Avant Technology W6451U66J9266ND 4GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
低于PassMark测试中的延时,ns
51
72
左右 29% 更低的延时
更快的写入速度,GB/s
11.8
8.2
测试中的平均数值
更高的内存带宽,mbps
25600
21300
左右 1.2% 更高的带宽
需要考虑的原因
Avant Technology W6451U66J9266ND 4GB
报告一个错误
更快的读取速度,GB/s
16.6
15.6
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Avant Technology W6451U66J9266ND 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
72
读取速度,GB/s
15.6
16.6
写入速度,GB/s
11.8
8.2
内存带宽,mbps
25600
21300
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2687
1731
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Avant Technology W6451U66J9266ND 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston 9905599-025.A00G 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Samsung M471A1G44BB0-CWE 8GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology BLT4G4D30AETA.K8FD 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Avant Technology W6451U66J9266ND 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3600C17-4GTZ 4GB
Mushkin 991586 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Samsung M378B5773CH0-CH9 2GB
A-DATA Technology DDR4 3600 2OZ 8GB
Corsair CML8GX3M2A1600C9 4GB
Corsair CMSX64GX4M2A2666C18 32GB
Samsung M393B5170FH0-CH9 4GB
Crucial Technology CT16G4SFD8266.C8FBD1 16GB
Kingston 99U5469-045.A00LF 4GB
SK Hynix HMA81GU6DJR8N-XN 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Corsair CMK16GX4M2E4000C19 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Kingston 9905665-011.A00G 4GB
PNY Electronics PNY 2GB
DSL Memory D4SS1G082SH21A-B 16GB
报告一个错误
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Bug description
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