RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CM4X16GE2666C16K8 16GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Corsair CM4X16GE2666C16K8 16GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Corsair CM4X16GE2666C16K8 16GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
Corsair CM4X16GE2666C16K8 16GB
报告一个错误
低于PassMark测试中的延时,ns
27
51
左右 -89% 更低的延时
更快的写入速度,GB/s
12.0
11.8
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CM4X16GE2666C16K8 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
27
读取速度,GB/s
15.6
15.6
写入速度,GB/s
11.8
12.0
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2687
2982
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CM4X16GE2666C16K8 16GB RAM的比较
Kingston ACR512X64D3S13C9G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-3600C17-8GTZKW 8GB
Elpida EBJ40UG8BBU0-GN-F 4GB
Crucial Technology BL16G32C16U4B.M16FE1 16GB
G Skill Intl F5-6400J3239G16G 16GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston XJ69DF-MIE2 8GB
AMD R538G1601U2S-UO 8GB
G Skill Intl F4-2800C14-16GTZ 16GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Gloway International (HK) STK4U2400D17042C 4GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMK16GX4M2F4400C19 8GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-4133C19-8GTZRF 8GB
Samsung M471A1K43CB1-CTD 8GB
Team Group Inc. DDR4 2666 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 8ATF1G64HZ-2G3A1 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
Samsung M471B5273CH0-CH9 4GB
Apacer Technology GD2.1542WS.001 8GB
Kingston 9965525-144.A00LF 8GB
G Skill Intl F4-3733C17-16GTZSW 16GB
Kingston 9965516-112.A00LF 16GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
报告一个错误
×
Bug description
Source link