Elpida EBJ40UG8BBU0-GN-F 4GB vs Crucial Technology BL16G32C16U4B.M16FE1 16GB

总分

Elpida EBJ40UG8BBU0-GN-F 4GB

Elpida EBJ40UG8BBU0-GN-F 4GB

总分

Crucial Technology BL16G32C16U4B.M16FE1 16GB

Crucial Technology BL16G32C16U4B.M16FE1 16GB

差异规格评论

差异

Elpida EBJ40UG8BBU0-GN-F 4GB

需要考虑的原因
Elpida EBJ40UG8BBU0-GN-F 4GB

报告一个错误

Crucial Technology BL16G32C16U4B.M16FE1 16GB

需要考虑的原因
Crucial Technology BL16G32C16U4B.M16FE1 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 41

左右 -46% 更低的延时
更快的读取速度，GB/s

19.2 12.5

测试中的平均数值
更快的写入速度，GB/s

15.5 8.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Elpida EBJ40UG8BBU0-GN-F 4GB

Crucial Technology BL16G32C16U4B.M16FE1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 28
读取速度，GB/s

12.5 19.2
写入速度，GB/s

8.2 15.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2087 3698

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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最新比较

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Kingston 99U5474-010.A00LF 2GB

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G Skill Intl F3-14900CL9-4GBSR 4GB

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Essencore Limited IM48GU88N24-FFFHMB 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F4-3333C16-16GTZSK 16GB

G Skill Intl F4-3333C16-16GTZSK 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

AMD R9S48G3206U2S 8GB

AMD R9S48G3206U2S 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 9ASF1G72AZ-2G3B1 8GB

Micron Technology 9ASF1G72AZ-2G3B1 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology CT8G4DFS8213.C8FH1 8GB

Crucial Technology CT8G4DFS8213.C8FH1 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Kingston 9905678-041.A00G 4GB

Kingston 9905678-041.A00G 4GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Corsair CMW256GX4M8E3200C16 32GB

Corsair CMW256GX4M8E3200C16 32GB