RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMK16GX4M1Z3600C18 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Corsair CMK16GX4M1Z3600C18 16GB

总分
star star star star star
Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分
star star star star star
Corsair CMK16GX4M1Z3600C18 16GB

Corsair CMK16GX4M1Z3600C18 16GB

差异 规格 评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB 需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
Corsair CMK16GX4M1Z3600C18 16GB 需要考虑的原因
Corsair CMK16GX4M1Z3600C18 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 51
    左右 -59% 更低的延时
  • 更快的读取速度，GB/s
    18.5 left arrow 15.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 11.8
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMK16GX4M1Z3600C18 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 32
  • 读取速度，GB/s
    15.6 left arrow 18.5
  • 写入速度，GB/s
    11.8 left arrow 13.4
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 left arrow PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2687 left arrow 3356

Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Corsair CMK16GX4M1Z3600C18 16GB RAM的比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMK16GX4M1Z3600C18 16GB
Corsair CMK16GX4M1Z3600C18 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMR32GX4M4C3466C16 8GB
Corsair CMR32GX4M4C3466C16 8GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
G Skill Intl F4-2666C18-4GRS 4GB
G Skill Intl F4-2666C18-4GRS 4GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Transcend Information TS2GLH64V4B 16GB
Transcend Information TS2GLH64V4B 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
SK Hynix HMA82GS6AFRFR-UH 16GB
SK Hynix HMA82GS6AFRFR-UH 16GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
Maxsun MSD48G26Q3 8GB
Maxsun MSD48G26Q3 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
INTENSO 4GB
INTENSO 4GB
内存RAM
Samsung M4 70T2864QZ3-CE6 1GB
Samsung M4 70T2864QZ3-CE6 1GB
Corsair CMH32GX4M4D3600C18 8GB
Corsair CMH32GX4M4D3600C18 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMK16GX4M2K4500C19 8GB
Corsair CMK16GX4M2K4500C19 8GB
内存RAM
Kingston KHX1600C10D3/8GXF 8GB
Kingston KHX1600C10D3/8GXF 8GB
Crucial Technology BLS4G4D240FSB.M8FADG 4GB
Crucial Technology BLS4G4D240FSB.M8FADG 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology CT8G4SFS824A.C8FBD1 8GB
Crucial Technology CT8G4SFS824A.C8FBD1 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology CB16GU2666.C8ET 16GB
Crucial Technology CB16GU2666.C8ET 16GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
Samsung M378A2G43MX3-CTD 16GB
Samsung M378A2G43MX3-CTD 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3200C14-8GTZSW 8GB
G Skill Intl F4-3200C14-8GTZSW 8GB
内存RAM