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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Crucial Technology BLS16G4D26BFSB.16FBD 16GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更高的内存带宽,mbps
25600
21300
左右 1.2% 更高的带宽
需要考虑的原因
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
报告一个错误
低于PassMark测试中的延时,ns
22
51
左右 -132% 更低的延时
更快的读取速度,GB/s
17.9
15.6
测试中的平均数值
更快的写入速度,GB/s
12.6
11.8
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
22
读取速度,GB/s
15.6
17.9
写入速度,GB/s
11.8
12.6
内存带宽,mbps
25600
21300
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2687
3152
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB RAM的比较
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Team Group Inc. TEAMGROUP-UD4-2800 8GB
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G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology BL16G32C16U4BL.M8FB1 16GB
Essencore Limited KD48GU88C-26N1600 8GB
Samsung M471A5244BB0-CRC 4GB
Kingston 9905403-090.A01LF 4GB
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Kingston 9965589-017.D00G 8GB
AMD AE34G1601U1 4GB
Essencore Limited IM44GU48N28-GGGHM 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston HP26D4U9S8MD-8 8GB
报告一个错误
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Bug description
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