Samsung M471B5273CH0-CH9 4GB vs G Skill Intl F4-4266C19-8GTRG 8GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

G Skill Intl F4-4266C19-8GTRG 8GB

G Skill Intl F4-4266C19-8GTRG 8GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

G Skill Intl F4-4266C19-8GTRG 8GB

需要考虑的原因
G Skill Intl F4-4266C19-8GTRG 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 48

左右 -140% 更低的延时
更快的读取速度，GB/s

20.1 8.9

测试中的平均数值
更快的写入速度，GB/s

19.3 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

G Skill Intl F4-4266C19-8GTRG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 20
读取速度，GB/s

8.9 20.1
写入速度，GB/s

5.9 19.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1420 4215

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

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G Skill Intl F4-3000C15-16GVR 16GB

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Samsung M471B5273CH0-CH9 4GB

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G Skill Intl F4-4266C19-8GTRG 8GB

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Kingston 9965433-034.A00LF 4GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Corsair CM4X32GC3200C16K2E 32GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Crucial Technology C 8GB

Crucial Technology C 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Maxsun MSD416G26Q3 16GB

Maxsun MSD416G26Q3 16GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Apacer Technology 78.CAGR4.DFC0B 8GB

Apacer Technology 78.CAGR4.DFC0B 8GB