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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLS4G4D240FSE.8FE 4GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Crucial Technology BLS4G4D240FSE.8FE 4GB

总分
star star star star star
Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FE 4GB

Crucial Technology BLS4G4D240FSE.8FE 4GB

差异 规格 评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB 需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    51 left arrow 65
    左右 22% 更低的延时
  • 更快的写入速度，GB/s
    11.8 left arrow 8.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Crucial Technology BLS4G4D240FSE.8FE 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FE 4GB
报告一个错误
  • 更快的读取速度，GB/s
    17.5 left arrow 15.6
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 65
  • 读取速度，GB/s
    15.6 left arrow 17.5
  • 写入速度，GB/s
    11.8 left arrow 8.7
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2687 left arrow 1921

Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Crucial Technology BLS4G4D240FSE.8FE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Ramaxel Technology RMUA5110MB78HAF2400 8GB
Ramaxel Technology RMUA5110MB78HAF2400 8GB
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内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
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Nanya Technology M2N1G64TUH8D5F-AC 1GB
AMD R744G2400U1S 4GB
AMD R744G2400U1S 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Apacer Technology 78.CAGNT.AR40B 8GB
Apacer Technology 78.CAGNT.AR40B 8GB
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SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
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Corsair CMK32GX4M4A2400C16 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
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Crucial Technology BLS16G4D30AESB.M16FE 16GB
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SK Hynix HMT425S6CFR6A-PB 2GB
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Panram International Corporation W4U2400PS-4G 4GB
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Kingston 9905471-002.A00LF 2GB
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Apacer Technology 78.CAGR9.40C0B 8GB
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Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
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Avant Technology J642GU42J9266NF 16GB
内存RAM
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G Skill Intl F4-3600C18-16GVK 16GB
内存RAM
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Patriot Memory (PDP Systems) PSD44G213341 4GB
内存RAM
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Team Group Inc. ZEUS-2133 8GB
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Kingston 9905471-071.A00LF 8GB
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Smart Modular SMS4WEC8C2K0446FCG 16GB
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