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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Crucial Technology BLS4G4D240FSE.M8FADM 4GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更快的读取速度,GB/s
15.6
15.5
测试中的平均数值
更快的写入速度,GB/s
11.8
11.0
测试中的平均数值
更高的内存带宽,mbps
25600
19200
左右 1.33% 更高的带宽
需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
51
左右 -113% 更低的延时
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
24
读取速度,GB/s
15.6
15.5
写入速度,GB/s
11.8
11.0
内存带宽,mbps
25600
19200
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2687
2445
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
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Smart Modular SH564128FH8NZQNSCG 4GB
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Samsung M393B2G70BH0-CH9 16GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
AMD R538G1601S2LS 8GB
报告一个错误
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