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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Crucial Technology CT8G4SFRA266.M8FRS 8GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Crucial Technology CT8G4SFRA266.M8FRS 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更高的内存带宽,mbps
25600
21300
左右 1.2% 更高的带宽
需要考虑的原因
Crucial Technology CT8G4SFRA266.M8FRS 8GB
报告一个错误
低于PassMark测试中的延时,ns
34
51
左右 -50% 更低的延时
更快的读取速度,GB/s
16.1
15.6
测试中的平均数值
更快的写入速度,GB/s
13.1
11.8
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
34
读取速度,GB/s
15.6
16.1
写入速度,GB/s
11.8
13.1
内存带宽,mbps
25600
21300
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2687
3047
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB RAM的比较
Samsung M378A1G43EB1-CPB 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hexon Technology Pte Ltd HEXON 1GB
Ramaxel Technology RMSA3260MD78HAF-2666 8GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
Kingston 9905316-106.A02LF 1GB
Crucial Technology BL8G26C16U4R.8FD 8GB
G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F4-4266C19-4GTZ 4GB
Kingston 99U5471-030.A00LF 8GB
G Skill Intl F4-3600C16-8GTZN 8GB
TwinMOS 9DNPBNZB-TATP 4GB
G Skill Intl F4-4000C16-8GTZRA 8GB
Kingston KVR16N11/8-SP 8GB
Golden Empire CL15-15-15 D4-2666 4GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-2133C15-8GRB 8GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3200C16-8GTZN 8GB
Corsair CMT32GX4M2C3200C16 16GB
Kingston KHX3200C16D4/16GX 16GB
A-DATA Technology DQKD1A08 1GB
Kingston 9905702-150.A00G 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingston KHX2666C15D4/8G 8GB
报告一个错误
×
Bug description
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