Micron Technology 8ATF2G64HZ-3G2E2 16GB vs G Skill Intl F4-4266C19-4GTZ 4GB

总分

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分

G Skill Intl F4-4266C19-4GTZ 4GB

G Skill Intl F4-4266C19-4GTZ 4GB

差异规格评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB

报告一个错误

更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

G Skill Intl F4-4266C19-4GTZ 4GB

需要考虑的原因
G Skill Intl F4-4266C19-4GTZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

18 51

左右 -183% 更低的延时
更快的读取速度，GB/s

20.3 15.6

测试中的平均数值
更快的写入速度，GB/s

17.8 11.8

测试中的平均数值

规格

完整的技术规格清单

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-4266C19-4GTZ 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

51 18
读取速度，GB/s

15.6 20.3
写入速度，GB/s

11.8 17.8
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2687 3507

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393A5143DB0-CRC 4GB

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Samsung M3 91T2953GZ3-CF7 1GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

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SK Hynix HMA851S6DJR6N-XN 4GB

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