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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更高的内存带宽,mbps
25600
19200
左右 1.33% 更高的带宽
需要考虑的原因
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
51
左右 -76% 更低的延时
更快的读取速度,GB/s
19.3
15.6
测试中的平均数值
更快的写入速度,GB/s
15.3
11.8
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
29
读取速度,GB/s
15.6
19.3
写入速度,GB/s
11.8
15.3
内存带宽,mbps
25600
19200
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2687
3557
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905624-051.A00G 8GB
G Skill Intl F5-6000U3636E16G 16GB
G Skill Intl F5-5600U3636C16G 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston KF3200C20S4/32GX 32MB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston KHX2133C15S4/8G 8GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMW16GX4M2Z3600C18 8GB
A-DATA Technology DDR3 1333G 2GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Kingston 9965433-034.A00LF 4GB
Ramaxel Technology RMUA5090KE68H9F2133 4GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BL32G32C16U4BL.M16FB 32GB
PNY Electronics 4GBH2X02E99927-16 4GB
Kingston 9965600-018.A00G 16GB
Samsung M471B1G73QH0-YK0 8GB
Transcend Information JM2666HLE-16G 16GB
Samsung M471B5273DH0-CH9 4GB
Kingston 9965662-009.A00G 16GB
SK Hynix HYMP164U64CP6-Y5 512MB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Samsung M471A1K43DB1-CTD 8GB
Kingston HX426C16FB2/8-SP 8GB
报告一个错误
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Bug description
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