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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Golden Empire CL16-16-16 D4-2800 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Golden Empire CL16-16-16 D4-2800 8GB

总分
star star star star star
Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分
star star star star star
Golden Empire CL16-16-16 D4-2800 8GB

Golden Empire CL16-16-16 D4-2800 8GB

差异 规格 评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB 需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.6 left arrow 15.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
Golden Empire CL16-16-16 D4-2800 8GB 需要考虑的原因
Golden Empire CL16-16-16 D4-2800 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 51
    左右 -104% 更低的延时
  • 更快的写入速度，GB/s
    11.9 left arrow 11.8
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Golden Empire CL16-16-16 D4-2800 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 25
  • 读取速度，GB/s
    15.6 left arrow 15.1
  • 写入速度，GB/s
    11.8 left arrow 11.9
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2687 left arrow 2914

Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Golden Empire CL16-16-16 D4-2800 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G32C16U4B.16FE 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Golden Empire CL16-16-16 D4-2800 8GB
Golden Empire CL16-16-16 D4-2800 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK32GX4M2Z3200C16 16GB
Corsair CMK32GX4M2Z3200C16 16GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston 99U5624-003.A00G 8GB
Kingston 99U5624-003.A00G 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
SK Hynix GKE800UD102408-2133 8GB
SK Hynix GKE800UD102408-2133 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD16GX4M4A2666C16 4GB
Corsair CMD16GX4M4A2666C16 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-3800C14-8GTZN 8GB
G Skill Intl F4-3800C14-8GTZN 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Apacer Technology 78.D2GFH.4030B 16GB
Apacer Technology 78.D2GFH.4030B 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3200C15-8GTZSW 8GB
G Skill Intl F4-3200C15-8GTZSW 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Corsair CMD32GX4M4A2666C15 8GB
Corsair CMD32GX4M4A2666C15 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
内存RAM