RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更快的读取速度,GB/s
15.6
15.5
测试中的平均数值
更快的写入速度,GB/s
11.8
10.2
测试中的平均数值
更高的内存带宽,mbps
25600
19200
左右 1.33% 更高的带宽
需要考虑的原因
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
51
左右 -96% 更低的延时
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
26
读取速度,GB/s
15.6
15.5
写入速度,GB/s
11.8
10.2
内存带宽,mbps
25600
19200
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2687
2486
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB RAM的比较
Kingston 9905403-444.A00LF 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology DQVE1908 512MB
Samsung M474A1G43DB0-CPB 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-3000C15-8GVR 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
Elpida EBJ41UF8BDU5-GN-F 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3200C16-4GVK 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Team Group Inc. TEAMGROUP-UD4-4300 8GB
Kingston 99U5474-010.A00LF 2GB
Kingston 16ATF2G64AZ-2G1B1 8GB
takeMS International AG TMS2GB264D082-805G 2GB
A-DATA Technology AE4S240038G17-BHYA 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston KHYXPX-HYJ 8GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMK16GX4M4A2666C16 4GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Samsung M3 78T2863EHS-CF7 1GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-3200C22-8GRS 8GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-3000C15-8GTZB 8GB
报告一个错误
×
Bug description
Source link