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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 9965604-001.D00G 16GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Kingston 9965604-001.D00G 16GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Kingston 9965604-001.D00G 16GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更快的读取速度,GB/s
15.6
10.5
测试中的平均数值
更快的写入速度,GB/s
11.8
8.0
测试中的平均数值
更高的内存带宽,mbps
25600
19200
左右 1.33% 更高的带宽
需要考虑的原因
Kingston 9965604-001.D00G 16GB
报告一个错误
低于PassMark测试中的延时,ns
35
51
左右 -46% 更低的延时
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 9965604-001.D00G 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
35
读取速度,GB/s
15.6
10.5
写入速度,GB/s
11.8
8.0
内存带宽,mbps
25600
19200
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2687
2353
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston 9965604-001.D00G 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology CT4G4DFS8213.M8FA 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
Kingston 9905678-033.A00G 4GB
Kingston 9965516-430.A00G 16GB
Hyundai Inc AR36C18S8K2HU416R 8GB
AMD R538G1601U2S-UO 8GB
G Skill Intl F4-3600C18-8GTRG 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-3600C17-8GTZ 8GB
报告一个错误
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Bug description
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