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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M393A2G40DB1-CRC 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Samsung M393A2G40DB1-CRC 16GB

总分
star star star star star
Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分
star star star star star
Samsung M393A2G40DB1-CRC 16GB

Samsung M393A2G40DB1-CRC 16GB

差异 规格 评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB 需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    51 left arrow 81
    左右 37% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 8.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 5.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Samsung M393A2G40DB1-CRC 16GB 需要考虑的原因
Samsung M393A2G40DB1-CRC 16GB
报告一个错误

规格

完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M393A2G40DB1-CRC 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 81
  • 读取速度，GB/s
    15.6 left arrow 8.5
  • 写入速度，GB/s
    11.8 left arrow 5.6
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2687 left arrow 1651

Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M393A2G40DB1-CRC 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M393A2G40DB1-CRC 16GB
Samsung M393A2G40DB1-CRC 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Corsair CMK64GX4M4C3000C16 16GB
Corsair CMK64GX4M4C3000C16 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-2133C15-8GNT 8GB
G Skill Intl F4-2133C15-8GNT 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Corsair CMK32GX4M2C3200C18 16GB
Corsair CMK32GX4M2C3200C18 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Corsair CMK32GX4M1D3000C16 32GB
Corsair CMK32GX4M1D3000C16 32GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Crucial Technology CT4G4DFS8266.C8FF 4GB
Crucial Technology CT4G4DFS8266.C8FF 4GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2933C16-16GTZRX 16GB
G Skill Intl F4-2933C16-16GTZRX 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Ramaxel Technology RMUA5090KB78HAF2133 8GB
Ramaxel Technology RMUA5090KB78HAF2133 8GB
内存RAM
Protocol Engines Kingrock 800 2GB 2GB
Protocol Engines Kingrock 800 2GB 2GB
G Skill Intl F4-2133C15-4GVR 4GB
G Skill Intl F4-2133C15-4GVR 4GB
内存RAM
Samsung M3 78T5663EH3-CF7 2GB
Samsung M3 78T5663EH3-CF7 2GB
Crucial Technology CT8G4DFS824A.C8FBD1 8GB
Crucial Technology CT8G4DFS824A.C8FBD1 8GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
G Skill Intl F4-2666C15-4GRR 4GB
G Skill Intl F4-2666C15-4GRR 4GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3200C16-32GVK 32GB
G Skill Intl F4-3200C16-32GVK 32GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
内存RAM