RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M471A1K43DB1-CTD 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Samsung M471A1K43DB1-CTD 8GB

总分
star star star star star
Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分
star star star star star
Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

差异 规格 评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB 需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
Samsung M471A1K43DB1-CTD 8GB 需要考虑的原因
Samsung M471A1K43DB1-CTD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 51
    左右 -46% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 15.6
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M471A1K43DB1-CTD 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 35
  • 读取速度，GB/s
    15.6 left arrow 15.7
  • 写入速度，GB/s
    11.8 left arrow 11.8
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2687 left arrow 2767

Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M471A1K43DB1-CTD 8GB RAM的比较

Crucial Technology CT8G4SFS632A.C4FE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Ramaxel Technology RMSA3300ME78HBF-2666 16GB
Ramaxel Technology RMSA3300ME78HBF-2666 16GB
内存RAM
Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-2800C15-8GVRB 8GB
G Skill Intl F4-2800C15-8GVRB 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Chun Well Technology Holding Limited D4U0826190B 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Gloway International (HK) STKD4GAM2400-F 8GB
Gloway International (HK) STKD4GAM2400-F 8GB
内存RAM
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Crucial Technology CT4G4SFS8213.C8FDD2 4GB
Crucial Technology CT4G4SFS8213.C8FDD2 4GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Essencore Limited KD48GU88A-26N1600 8GB
Essencore Limited KD48GU88A-26N1600 8GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMK16GX4M2A2133C13 8GB
Corsair CMK16GX4M2A2133C13 8GB
内存RAM