RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SK Hynix HMA451U6MFR8N-TF 4GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs SK Hynix HMA451U6MFR8N-TF 4GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
SK Hynix HMA451U6MFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更快的读取速度,GB/s
15.6
13.4
测试中的平均数值
更快的写入速度,GB/s
11.8
10.3
测试中的平均数值
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
SK Hynix HMA451U6MFR8N-TF 4GB
报告一个错误
低于PassMark测试中的延时,ns
36
51
左右 -42% 更低的延时
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SK Hynix HMA451U6MFR8N-TF 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
36
读取速度,GB/s
15.6
13.4
写入速度,GB/s
11.8
10.3
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2687
2466
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SK Hynix HMA451U6MFR8N-TF 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SK Hynix HMA451U6MFR8N-TF 4GB
Samsung M393B5170FH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
Kingston 9905458-017.A01LF 4GB
Kingston 9905598-009.A00G 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston CBD26D4U9S8ME-8 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Crucial Technology CT102464BA160B.M16 8GB
Kingston 9905663-005.A00G 16GB
SK Hynix HYMP112S64CP6-S6 1GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CB8GS2666.C8ET 8GB
PNY Electronics PNY 2GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMT32GX4M2K4000C19 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-3200C14-8GTRG 8GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology CT8G4SFD824A.C16FBD2 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT16G4SFS832A.M8FB 16GB
报告一个错误
×
Bug description
Source link