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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Smart Modular SF4641G8CK8IEHLSBG 8GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Smart Modular SF4641G8CK8IEHLSBG 8GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Smart Modular SF4641G8CK8IEHLSBG 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更快的读取速度,GB/s
15.6
14.8
测试中的平均数值
更快的写入速度,GB/s
11.8
10.4
测试中的平均数值
更高的内存带宽,mbps
25600
21300
左右 1.2% 更高的带宽
需要考虑的原因
Smart Modular SF4641G8CK8IEHLSBG 8GB
报告一个错误
低于PassMark测试中的延时,ns
36
51
左右 -42% 更低的延时
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Smart Modular SF4641G8CK8IEHLSBG 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
36
读取速度,GB/s
15.6
14.8
写入速度,GB/s
11.8
10.4
内存带宽,mbps
25600
21300
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2687
2515
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Smart Modular SF4641G8CK8IEHLSBG 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Smart Modular SF4641G8CK8IEHLSBG 8GB
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Corsair CMK16GX4M2K4266C16 8GB
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Samsung M391B5673EH1-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N
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Kingston KHX2666C13D4/8GX 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
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Crucial Technology CT51264BD160B.C16F 4GB
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Good Wealth Technology Ltd. KETECH 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMK16GX4M4B3866C18 4GB
Kingston 9965525-155.A00LF 8GB
Samsung M474A2K43BB1-CRC 16GB
报告一个错误
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Bug description
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