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Samsung M393B1G70BH0-YK0 8GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
比较
Samsung M393B1G70BH0-YK0 8GB vs Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
总分
Samsung M393B1G70BH0-YK0 8GB
总分
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB
报告一个错误
需要考虑的原因
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
报告一个错误
低于PassMark测试中的延时,ns
35
49
左右 -40% 更低的延时
更快的读取速度,GB/s
16.8
10.2
测试中的平均数值
更快的写入速度,GB/s
13.7
8.1
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Samsung M393B1G70BH0-YK0 8GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
49
35
读取速度,GB/s
10.2
16.8
写入速度,GB/s
8.1
13.7
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2465
3306
Samsung M393B1G70BH0-YK0 8GB RAM的比较
Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1G70BH0-YK0 8GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400
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Kingston KHX1600C9S3L/4G 4GB
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Corsair CM2X2048-6400C5 2GB
A-DATA Technology AO1P32NC8W1-BDZS 8GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3200C16-8GVRB 8GB
报告一个错误
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Bug description
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