Micron Technology 8ATF2G64HZ-3G2E2 16GB vs V-GEN D4H4GL26A8TS5 4GB

总分

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分

V-GEN D4H4GL26A8TS5 4GB

V-GEN D4H4GL26A8TS5 4GB

差异规格评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB

报告一个错误

低于PassMark测试中的延时，ns

51 67

左右 24% 更低的延时
更快的写入速度，GB/s

11.8 8.3

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

V-GEN D4H4GL26A8TS5 4GB

需要考虑的原因
V-GEN D4H4GL26A8TS5 4GB

报告一个错误

更快的读取速度，GB/s

16.2 15.6

测试中的平均数值

规格

完整的技术规格清单

Micron Technology 8ATF2G64HZ-3G2E2 16GB

V-GEN D4H4GL26A8TS5 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

51 67
读取速度，GB/s

15.6 16.2
写入速度，GB/s

11.8 8.3
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2687 1798

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston MSI24D4U7D8MD-16 16GB

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Samsung M3 93T5750CZA-CE6 2GB

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A-DATA Technology AD73I1B1672EG 2GB

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SK Hynix HMA851S6CJR6N-XN 4GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

Corsair CMSX8GX4M1A2666C18 8GB

Corsair CMSX8GX4M1A2666C18 8GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

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Kingston KF3200C20S4/16GX 16GB

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PNY Electronics PNY 2GB

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