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Micron Technology 8ATF51264AZ-2G1B1 4GB
Micron Technology 18ASF1G72PZ-2G1AV 8GB

Micron Technology 8ATF51264AZ-2G1B1 4GB vs Micron Technology 18ASF1G72PZ-2G1AV 8GB

总分
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Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

总分
star star star star star
Micron Technology 18ASF1G72PZ-2G1AV 8GB

Micron Technology 18ASF1G72PZ-2G1AV 8GB

差异 规格 评论

差异

Micron Technology 8ATF51264AZ-2G1B1 4GB 需要考虑的原因
Micron Technology 8ATF51264AZ-2G1B1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 60
    左右 52% 更低的延时
  • 更快的读取速度，GB/s
    15.8 left arrow 6.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 4.2
    测试中的平均数值
Micron Technology 18ASF1G72PZ-2G1AV 8GB 需要考虑的原因
Micron Technology 18ASF1G72PZ-2G1AV 8GB
报告一个错误

规格

完整的技术规格清单
Micron Technology 8ATF51264AZ-2G1B1 4GB
Micron Technology 18ASF1G72PZ-2G1AV 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 60
  • 读取速度，GB/s
    15.8 left arrow 6.4
  • 写入速度，GB/s
    11.8 left arrow 4.2
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2711 left arrow 1400

Micron Technology 8ATF51264AZ-2G1B1 4GB RAM的比较

Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 18ASF1G72PZ-2G1AV 8GB RAM的比较

Kingston ACR512X64D3S13C9G 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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