Micron Technology 8ATF51264AZ-2G1B1 4GB vs Samsung M378A5143EB1-CPB 4GB

总分

Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

总分

Samsung M378A5143EB1-CPB 4GB

Samsung M378A5143EB1-CPB 4GB

差异规格评论

差异

Micron Technology 8ATF51264AZ-2G1B1 4GB

需要考虑的原因
Micron Technology 8ATF51264AZ-2G1B1 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 38

左右 24% 更低的延时
更快的读取速度，GB/s

15.8 14.6

测试中的平均数值
更快的写入速度，GB/s

11.8 10.8

测试中的平均数值

Samsung M378A5143EB1-CPB 4GB

需要考虑的原因
Samsung M378A5143EB1-CPB 4GB

报告一个错误

规格

完整的技术规格清单

Micron Technology 8ATF51264AZ-2G1B1 4GB

Samsung M378A5143EB1-CPB 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 38
读取速度，GB/s

15.8 14.6
写入速度，GB/s

11.8 10.8
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2711 2298

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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