Micron Technology 8JSF25664HZ-1G4D1 2GB vs Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

总分

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

总分

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

差异规格评论

差异

Micron Technology 8JSF25664HZ-1G4D1 2GB

需要考虑的原因
Micron Technology 8JSF25664HZ-1G4D1 2GB

报告一个错误

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

需要考虑的原因
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 41

左右 -52% 更低的延时
更快的读取速度，GB/s

15.3 10.7

测试中的平均数值
更快的写入速度，GB/s

11.6 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Micron Technology 8JSF25664HZ-1G4D1 2GB

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 27
读取速度，GB/s

10.7 15.3
写入速度，GB/s

7.5 11.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1335 2291

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Corsair CM4X8GD3200C16K2E 8GB

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Corsair CMD8GX3M2A2933C12 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C

Corsair CMW256GX4M8E3200C16 32GB

Corsair CMW256GX4M8E3200C16 32GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Corsair CMW32GX4M4K4266C19 8GB

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Strontium EVMT8G1600U86S 8GB

Kingston 9905625-098.A00G 16GB

Kingston 9905625-098.A00G 16GB