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Micron Technology 8JSF25664HZ-1G4D1 2GB
G Skill Intl F4-3333C16-8GTZSK 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB vs G Skill Intl F4-3333C16-8GTZSK 8GB

总分
star star star star star
Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

总分
star star star star star
G Skill Intl F4-3333C16-8GTZSK 8GB

G Skill Intl F4-3333C16-8GTZSK 8GB

差异 规格 评论

差异

Micron Technology 8JSF25664HZ-1G4D1 2GB 需要考虑的原因
Micron Technology 8JSF25664HZ-1G4D1 2GB
报告一个错误
G Skill Intl F4-3333C16-8GTZSK 8GB 需要考虑的原因
G Skill Intl F4-3333C16-8GTZSK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 41
    左右 -105% 更低的延时
  • 更快的读取速度，GB/s
    20 left arrow 10.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.1 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Micron Technology 8JSF25664HZ-1G4D1 2GB
G Skill Intl F4-3333C16-8GTZSK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 20
  • 读取速度，GB/s
    10.7 left arrow 20.0
  • 写入速度，GB/s
    7.5 left arrow 17.1
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1335 left arrow 3703

Micron Technology 8JSF25664HZ-1G4D1 2GB RAM的比较

Patriot Memory (PDP Systems) PSD34G160081S 4GB
SK Hynix HMA82GS7AFR8N-UH 16GB

G Skill Intl F4-3333C16-8GTZSK 8GB RAM的比较

Kingston 9905403-444.A00LF 4GB
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
G Skill Intl F4-3333C16-8GTZSK 8GB
G Skill Intl F4-3333C16-8GTZSK 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
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内存RAM
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内存RAM
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内存RAM
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G Skill Intl F4-2800C15-8GRK 8GB
内存RAM
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