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Micron Technology 8KTF51264HZ-1G6N1 4GB
Patriot Memory (PDP Systems) PSD38G16002S 8GB

Micron Technology 8KTF51264HZ-1G6N1 4GB vs Patriot Memory (PDP Systems) PSD38G16002S 8GB

总分
star star star star star
Micron Technology 8KTF51264HZ-1G6N1 4GB

Micron Technology 8KTF51264HZ-1G6N1 4GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD38G16002S 8GB

Patriot Memory (PDP Systems) PSD38G16002S 8GB

差异 规格 评论

差异

Micron Technology 8KTF51264HZ-1G6N1 4GB 需要考虑的原因
Micron Technology 8KTF51264HZ-1G6N1 4GB
报告一个错误
  • 更快的读取速度，GB/s
    13.5 left arrow 12.2
    测试中的平均数值
Patriot Memory (PDP Systems) PSD38G16002S 8GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD38G16002S 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 42
    左右 -2% 更低的延时
  • 更快的写入速度，GB/s
    8.6 left arrow 8.3
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 8KTF51264HZ-1G6N1 4GB
Patriot Memory (PDP Systems) PSD38G16002S 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    42 left arrow 41
  • 读取速度，GB/s
    13.5 left arrow 12.2
  • 写入速度，GB/s
    8.3 left arrow 8.6
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2114 left arrow 2062

Micron Technology 8KTF51264HZ-1G6N1 4GB RAM的比较

Apacer Technology 76.C102G.D170B 8GB

Patriot Memory (PDP Systems) PSD38G16002S 8GB RAM的比较

Samsung M471B5173BH0-CK0 4GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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