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Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
SK Hynix HMAA2GU6AJR8N-XN 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB vs SK Hynix HMAA2GU6AJR8N-XN 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
总分
SK Hynix HMAA2GU6AJR8N-XN 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
33
左右 12% 更低的延时
需要考虑的原因
SK Hynix HMAA2GU6AJR8N-XN 16GB
报告一个错误
更快的读取速度,GB/s
17.1
12.1
测试中的平均数值
更快的写入速度,GB/s
11.0
7.8
测试中的平均数值
更高的内存带宽,mbps
25600
12800
左右 2 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
SK Hynix HMAA2GU6AJR8N-XN 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
33
读取速度,GB/s
12.1
17.1
写入速度,GB/s
7.8
11.0
内存带宽,mbps
12800
25600
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2177
3110
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB RAM的比较
G Skill Intl F3-12800CL9-4GBRL 4GB
Avant Technology W644GU44J2320NH 32GB
SK Hynix HMAA2GU6AJR8N-XN 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
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Corsair CMD8GX3M2A2933C12 4GB
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报告一个错误
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Bug description
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