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Samsung M471B5273DH0-CK0 4GB
Micron Technology 16JSF51264HZ-1G4D1 4GB

Samsung M471B5273DH0-CK0 4GB vs Micron Technology 16JSF51264HZ-1G4D1 4GB

总分
star star star star star
Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分
star star star star star
Micron Technology 16JSF51264HZ-1G4D1 4GB

Micron Technology 16JSF51264HZ-1G4D1 4GB

差异 规格 评论

差异

Samsung M471B5273DH0-CK0 4GB 需要考虑的原因
Samsung M471B5273DH0-CK0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 43
    左右 5% 更低的延时
  • 更快的读取速度，GB/s
    13.3 left arrow 10.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.0 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21% 更高的带宽
Micron Technology 16JSF51264HZ-1G4D1 4GB 需要考虑的原因
Micron Technology 16JSF51264HZ-1G4D1 4GB
报告一个错误

规格

完整的技术规格清单
Samsung M471B5273DH0-CK0 4GB
Micron Technology 16JSF51264HZ-1G4D1 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    41 left arrow 43
  • 读取速度，GB/s
    13.3 left arrow 10.5
  • 写入速度，GB/s
    9.0 left arrow 6.8
  • 内存带宽，mbps
    12800 left arrow 10600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2016 left arrow 1682

Samsung M471B5273DH0-CK0 4GB RAM的比较

Corsair CMD8GX3M2A2933C12 4GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB

Micron Technology 16JSF51264HZ-1G4D1 4GB RAM的比较

A-DATA Technology AM1L16BC4R1-B1HS 4GB
Corsair CMSO4GX3M1A1333C9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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