Mushkin 991586 2GB vs EXCELERAM D48G8G8H8SS9CJRB22 8GB

总分

Mushkin 991586 2GB

Mushkin 991586 2GB

总分

EXCELERAM D48G8G8H8SS9CJRB22 8GB

EXCELERAM D48G8G8H8SS9CJRB22 8GB

差异规格评论

差异

Mushkin 991586 2GB

需要考虑的原因
Mushkin 991586 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 65

左右 60% 更低的延时

EXCELERAM D48G8G8H8SS9CJRB22 8GB

需要考虑的原因
EXCELERAM D48G8G8H8SS9CJRB22 8GB

报告一个错误

更快的读取速度，GB/s

17 13.8

测试中的平均数值
更快的写入速度，GB/s

9.5 7.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Mushkin 991586 2GB

EXCELERAM D48G8G8H8SS9CJRB22 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 65
读取速度，GB/s

13.8 17.0
写入速度，GB/s

7.9 9.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2156 2058

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Mushkin MR[ABC]4U320GJJM8G 8GB

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Kingston ACR256X64D3S1333C9 2GB

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G Skill Intl F4-4000C18-8GTRG 8GB

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Kingston 9905403-156.A00LF 2GB

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AMD R538G1601U2S-UO 8GB

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Corsair CMK8GX4M1D2400C14 8GB

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InnoDisk Corporation M4S0-8GSSOCIK 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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Corsair CMR128GX4M8Z2933C16 16GB

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G Skill Intl F4-3200C15-8GTZ 8GB

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A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

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Kingston 9965662-010.A00G 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT8G4DFD824A.C16FDR2 8GB

Crucial Technology CT8G4DFD824A.C16FDR2 8GB

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Samsung M378B5673EH1-CF8 2GB

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Kingston KF3200C20S4/32GX 32MB

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Swissbit MEU25664D6BC2EP-30 2GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB