AMD R538G1601U2S-UO 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

总分

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

差异规格评论

差异

AMD R538G1601U2S-UO 8GB

需要考虑的原因
AMD R538G1601U2S-UO 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 29

左右 10% 更低的延时
更快的读取速度，GB/s

14.2 13.6

测试中的平均数值
更快的写入速度，GB/s

10.0 9.9

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S-UO 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 29
读取速度，GB/s

14.2 13.6
写入速度，GB/s

10.0 9.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2634 2419

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-3466C16-8GVK 8GB

G Skill Intl F4-3466C16-8GVK 8GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston XJ69DF-MIE2 8GB

Kingston XJ69DF-MIE2 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology CT16G4SFD8266.C16FN 16GB

Crucial Technology CT16G4SFD8266.C16FN 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-3000C15-8GRR 8GB

G Skill Intl F4-3000C15-8GRR 8GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Crucial Technology BLS4G4S240FSD.8FAR 4GB

Crucial Technology BLS4G4S240FSD.8FAR 4GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Apacer Technology GD2.1827CS.003 8GB

Apacer Technology GD2.1827CS.003 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Crucial Technology BLS4G4D240FSB.8FARG 4GB

Crucial Technology BLS4G4D240FSB.8FARG 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Crucial Technology BL8G26C16U4R.8FD 8GB

Crucial Technology BL8G26C16U4R.8FD 8GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

G Skill Intl F4-3000C15-4GVSB 4GB

G Skill Intl F4-3000C15-4GVSB 4GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Crucial Technology CT16G4SFRA266.M16FR 16GB

Crucial Technology CT16G4SFRA266.M16FR 16GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Kingmax Semiconductor GLAG42F-18---------- 8GB

Kingmax Semiconductor GLAG42F-18---------- 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB