Mushkin 991586 2GB vs G Skill Intl F4-3000C14-16GVKD 16GB

总分

Mushkin 991586 2GB

Mushkin 991586 2GB

总分

G Skill Intl F4-3000C14-16GVKD 16GB

G Skill Intl F4-3000C14-16GVKD 16GB

差异规格评论

差异

Mushkin 991586 2GB

需要考虑的原因
Mushkin 991586 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 29

左右 10% 更低的延时
更快的读取速度，GB/s

13.8 13.4

测试中的平均数值

G Skill Intl F4-3000C14-16GVKD 16GB

需要考虑的原因
G Skill Intl F4-3000C14-16GVKD 16GB

报告一个错误

更快的写入速度，GB/s

10.3 7.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Mushkin 991586 2GB

G Skill Intl F4-3000C14-16GVKD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 29
读取速度，GB/s

13.8 13.4
写入速度，GB/s

7.9 10.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2156 2832

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMW64GX4M4K3600C18 16GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Kingston CBD32D4S2S1ME-8 8GB

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Kingston 99U5474-022.A00LF 2GB

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G Skill Intl F4-3000C16-16GTZR 16GB

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Crucial Technology BL8G36C16U4RL.M8FE1 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Corsair CMD64GX4M4B3000C15 16GB

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Crucial Technology CT8G4DFS824A.C8FDD1 8GB

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Samsung M378B5773DH0-CH9 2GB

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Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Corsair CMSX64GX4M4A2400C16 16GB

Corsair CMSX64GX4M4A2400C16 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

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Kingston KVR26N19D8/16 16GB

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Kingston 9905316-106.A02LF 1GB

Patriot Memory (PDP Systems) PSD44G240041 4GB

Patriot Memory (PDP Systems) PSD44G240041 4GB