Mushkin 991586 2GB vs G Skill Intl F4-4000C14-16GTZR 16GB

总分

Mushkin 991586 2GB

Mushkin 991586 2GB

总分

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

差异规格评论

差异

Mushkin 991586 2GB

需要考虑的原因
Mushkin 991586 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 29

左右 10% 更低的延时

G Skill Intl F4-4000C14-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-4000C14-16GTZR 16GB

报告一个错误

更快的读取速度，GB/s

24 13.8

测试中的平均数值
更快的写入速度，GB/s

20.0 7.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Mushkin 991586 2GB

G Skill Intl F4-4000C14-16GTZR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 29
读取速度，GB/s

13.8 24.0
写入速度，GB/s

7.9 20.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2156 4156

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Samsung M386B4G70DM0-CMA4 32GB

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SK Hynix HMT425S6CFR6A-PB 2GB

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Ramaxel Technology RMUA5120MB86H9F2400 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston XG9XKG-MIE 16GB

Kingston XG9XKG-MIE 16GB

Apacer Technology 76.D105G.D090B 16GB

Apacer Technology 76.D105G.D090B 16GB

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Crucial Technology BLS4G4D240FSB.M8FADG 4GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

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G Skill Intl F4-3200C14-8GTZKY 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMK16GX4M2D3000C16 8GB

Corsair CMK16GX4M2D3000C16 8GB