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Mushkin 991586 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

Mushkin 991586 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

总分
star star star star star
Mushkin 991586 2GB

Mushkin 991586 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

差异 规格 评论

差异

Mushkin 991586 2GB 需要考虑的原因
Mushkin 991586 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 27
    左右 4% 更低的延时
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
报告一个错误
  • 更快的写入速度，GB/s
    9.8 left arrow 7.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Mushkin 991586 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 27
  • 读取速度，GB/s
    13.8 left arrow 13.8
  • 写入速度，GB/s
    7.9 left arrow 9.8
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2156 left arrow 2323

Mushkin 991586 2GB RAM的比较

Mushkin 999015 4GB
Samsung M471A1K1KBB1-CRC 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB RAM的比较

Apacer Technology 78.01G86.9H50C 1GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Mushkin 991586 2GB
Mushkin 991586 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
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takeMS International AG TMS2GB264D082-805G 2GB
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
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内存RAM
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内存RAM
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