Mushkin 991679ES 996679ES 2GB vs Corsair CMT32GX4M2D3600C18 16GB

总分

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

总分

Corsair CMT32GX4M2D3600C18 16GB

Corsair CMT32GX4M2D3600C18 16GB

差异规格评论

差异

Mushkin 991679ES 996679ES 2GB

需要考虑的原因
Mushkin 991679ES 996679ES 2GB

报告一个错误

Corsair CMT32GX4M2D3600C18 16GB

需要考虑的原因
Corsair CMT32GX4M2D3600C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 63

左右 -103% 更低的延时
更快的读取速度，GB/s

19.8 7.7

测试中的平均数值
更快的写入速度，GB/s

15.6 5.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Mushkin 991679ES 996679ES 2GB

Corsair CMT32GX4M2D3600C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 31
读取速度，GB/s

7.7 19.8
写入速度，GB/s

5.0 15.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1130 3687

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP112U64CP8-Y5 1GB

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Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

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Kingston KHX3200C18D4/4G 4GB

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Samsung DDR3 8GB 1600MHz 8GB

AMD R9S48G3206U2S 8GB

AMD R9S48G3206U2S 8GB

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Corsair CMR16GX4M2Z2933C16 8GB