Mushkin 991679ES 996679ES 2GB vs Crucial Technology BLS8G4D32AESTK.M8FE 8GB

总分

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

总分

Crucial Technology BLS8G4D32AESTK.M8FE 8GB

Crucial Technology BLS8G4D32AESTK.M8FE 8GB

差异规格评论

差异

Mushkin 991679ES 996679ES 2GB

需要考虑的原因
Mushkin 991679ES 996679ES 2GB

报告一个错误

Crucial Technology BLS8G4D32AESTK.M8FE 8GB

需要考虑的原因
Crucial Technology BLS8G4D32AESTK.M8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 63

左右 -110% 更低的延时
更快的读取速度，GB/s

17.4 7.7

测试中的平均数值
更快的写入速度，GB/s

14.4 5.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Mushkin 991679ES 996679ES 2GB

Crucial Technology BLS8G4D32AESTK.M8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 30
读取速度，GB/s

7.7 17.4
写入速度，GB/s

5.0 14.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1130 3327

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Chun Well Technology Holding Limited ND4U0840180BRPDE 8

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Kingston 9905744-005.A00G 16GB

Kingston 9905744-005.A00G 16GB