Mushkin 991679ES 996679ES 2GB vs G Skill Intl F4-2400C15-8GNT 8GB

总分

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

总分

G Skill Intl F4-2400C15-8GNT 8GB

G Skill Intl F4-2400C15-8GNT 8GB

差异规格评论

差异

Mushkin 991679ES 996679ES 2GB

需要考虑的原因
Mushkin 991679ES 996679ES 2GB

报告一个错误

G Skill Intl F4-2400C15-8GNT 8GB

需要考虑的原因
G Skill Intl F4-2400C15-8GNT 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 63

左右 -97% 更低的延时
更快的读取速度，GB/s

16.5 7.7

测试中的平均数值
更快的写入速度，GB/s

11.6 5.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Mushkin 991679ES 996679ES 2GB

G Skill Intl F4-2400C15-8GNT 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 32
读取速度，GB/s

7.7 16.5
写入速度，GB/s

5.0 11.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1130 2920

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

G Skill Intl F4-2400C15-8GNT 8GB

G Skill Intl F4-2400C15-8GNT 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Crucial Technology CT8G4SFS8213.C8FBD1 8GB

Crucial Technology CT8G4SFS8213.C8FBD1 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Crucial Technology BLS16G4D240FSB.16FBR 16GB

Crucial Technology BLS16G4D240FSB.16FBR 16GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

G Skill Intl F4-2400C15-8GTZRX 8GB

G Skill Intl F4-2400C15-8GTZRX 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Kingston 99U5712-002.A00G 16GB

Kingston 99U5712-002.A00G 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB

Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A

HT Micron HTH5AN8G8NCJR-VKD 8GB

HT Micron HTH5AN8G8NCJR-VKD 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-3200C16-8GVSB 8GB

G Skill Intl F4-3200C16-8GVSB 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Apacer Technology 78.CAGR4.DFC0B 8GB

Apacer Technology 78.CAGR4.DFC0B 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology CT8G4SFS8266.M8FE 8GB

Crucial Technology CT8G4SFS8266.M8FE 8GB

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Kingston KF3600C17D4/8GX 8GB

Kingston KF3600C17D4/8GX 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Samsung M393A2G40EB2-CTD 16GB

Samsung M393A2G40EB2-CTD 16GB