Mushkin 991679ES 996679ES 2GB vs Panram International Corporation D4N2400PS-8G 8GB

总分

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

总分

Panram International Corporation D4N2400PS-8G 8GB

Panram International Corporation D4N2400PS-8G 8GB

差异规格评论

差异

Mushkin 991679ES 996679ES 2GB

需要考虑的原因
Mushkin 991679ES 996679ES 2GB

报告一个错误

Panram International Corporation D4N2400PS-8G 8GB

需要考虑的原因
Panram International Corporation D4N2400PS-8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 63

左右 -152% 更低的延时
更快的读取速度，GB/s

12.5 7.7

测试中的平均数值
更快的写入速度，GB/s

6.1 5.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Mushkin 991679ES 996679ES 2GB

Panram International Corporation D4N2400PS-8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 25
读取速度，GB/s

7.7 12.5
写入速度，GB/s

5.0 6.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1130 1858

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. UD5-6400 16GB

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Corsair CMSX32GX4M2A3000C16 16GB

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Kingston KF2666C15S4/16G 16GB

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Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

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Samsung M3 78T2863QZS-CF7 1GB

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Kingston 9905678-024.A00G 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-3200C16-16GVS 16GB