Samsung M4 70T2953EZ3-CE6 1GB vs Kingston 9965662-019.A00G 32GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

Kingston 9965662-019.A00G 32GB

Kingston 9965662-019.A00G 32GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

Kingston 9965662-019.A00G 32GB

需要考虑的原因
Kingston 9965662-019.A00G 32GB

报告一个错误

低于PassMark测试中的延时，ns

33 73

左右 -121% 更低的延时
更快的读取速度，GB/s

9.2 3

测试中的平均数值
更快的写入速度，GB/s

8.7 1,423.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

Kingston 9965662-019.A00G 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 33
读取速度，GB/s

3,510.5 9.2
写入速度，GB/s

1,423.3 8.7
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

476 2175

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Apacer Technology 78.C1GS7.DFW0C 8GB

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Samsung M393B1K70QB0-CK0 8GB

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Crucial Technology CT32G4SFD832A.M16FB 32GB

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Crucial Technology CT16G4DFD832A.M16FR 16GB

Crucial Technology CT16G4DFD832A.M16FR 16GB

Crucial Technology CT51264BD1339.M16F 4GB

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Apacer Technology 78.CAGP7.AZC0B 8GB

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Samsung M391B5273CH0-CH9 4GB

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Ramaxel Technology RMUA5180ME78HBF-2666 16GB

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PNY Electronics PNY 2GB

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Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB

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Kingston SMD4-S8G48HJ-26V 8GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Corsair CMK64GX4M4A2133C13 16GB

Corsair CMK64GX4M4A2133C13 16GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

G Skill Intl F4-3200C16-8GTZRN 8GB

G Skill Intl F4-3200C16-8GTZRN 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Crucial Technology BLS16G4D32AESB.M16FE 16GB

Crucial Technology BLS16G4D32AESB.M16FE 16GB