Mushkin 991679ES 996679ES 2GB vs SK Hynix HMA81GU6JJR8N-VK 8GB

总分

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

总分

SK Hynix HMA81GU6JJR8N-VK 8GB

SK Hynix HMA81GU6JJR8N-VK 8GB

差异规格评论

差异

Mushkin 991679ES 996679ES 2GB

需要考虑的原因
Mushkin 991679ES 996679ES 2GB

报告一个错误

SK Hynix HMA81GU6JJR8N-VK 8GB

需要考虑的原因
SK Hynix HMA81GU6JJR8N-VK 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 63

左右 -85% 更低的延时
更快的读取速度，GB/s

16.2 7.7

测试中的平均数值
更快的写入速度，GB/s

11.9 5.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Mushkin 991679ES 996679ES 2GB

SK Hynix HMA81GU6JJR8N-VK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 34
读取速度，GB/s

7.7 16.2
写入速度，GB/s

5.0 11.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1130 2907

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905403-090.A01LF 4GB

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Kingston 9905403-515.A00LF 8GB

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Micron Technology 8ATF1G64HZ-2G3B1 8GB

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Corsair CMU32GX4M2C3200C16 16GB

Corsair CMU32GX4M2C3200C16 16GB

Corsair CM5S16GM4800A40K2 16GB

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G Skill Intl F4-3200C18-8GRS 8GB

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G Skill Intl F5-6000J3636F16G 16GB

G Skill Intl F5-6000J3636F16G 16GB

Crucial Technology CT16G4DFRA32A.C16FP 16GB

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AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

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Patriot Memory (PDP Systems) PSD44G240081S 4GB

PNY Electronics PNY 2GB

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G Skill Intl F4-3600C17-8GTRG 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

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Crucial Technology BL8G32C16U4WL.8FE 8GB

Crucial Technology BL8G32C16U4WL.8FE 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Kingston X5H5PW-MIE 8GB

Kingston X5H5PW-MIE 8GB