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Nanya Technology M2F2G64CB88B7N-CG 2GB
Panram International Corporation PUD42400C154G2NJW 4GB

Nanya Technology M2F2G64CB88B7N-CG 2GB vs Panram International Corporation PUD42400C154G2NJW 4GB

总分
star star star star star
Nanya Technology M2F2G64CB88B7N-CG 2GB

Nanya Technology M2F2G64CB88B7N-CG 2GB

总分
star star star star star
Panram International Corporation PUD42400C154G2NJW 4GB

Panram International Corporation PUD42400C154G2NJW 4GB

差异 规格 评论

差异

Nanya Technology M2F2G64CB88B7N-CG 2GB 需要考虑的原因
Nanya Technology M2F2G64CB88B7N-CG 2GB
报告一个错误
Panram International Corporation PUD42400C154G2NJW 4GB 需要考虑的原因
Panram International Corporation PUD42400C154G2NJW 4GB
报告一个错误
  • 更快的读取速度，GB/s
    13.7 left arrow 12.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.2 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F2G64CB88B7N-CG 2GB
Panram International Corporation PUD42400C154G2NJW 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 26
  • 读取速度，GB/s
    12.1 left arrow 13.7
  • 写入速度，GB/s
    7.2 left arrow 10.2
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1676 left arrow 2594

Nanya Technology M2F2G64CB88B7N-CG 2GB RAM的比较

SK Hynix HMT325U6CFR8C-H9 2GB
Kingston KHX2400C15D4/4G 4GB

Panram International Corporation PUD42400C154G2NJW 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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G Skill Intl F2-8500CL5-2GBPI 2GB
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内存RAM
Nanya Technology M2F2G64CB88B7N-CG 2GB
Nanya Technology M2F2G64CB88B7N-CG 2GB
Panram International Corporation PUD42400C154G2NJW 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
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内存RAM
Samsung M471B5173QH0-YK0 4GB
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Kingston KHX2666C16/16G 16GB
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内存RAM
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A-DATA Technology DQKD1A08 1GB
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Corsair CMSX16GX4M2A2400C16 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-4400C16-8GTZR 8GB
G Skill Intl F4-4400C16-8GTZR 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
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Panram International Corporation PUD42133C158G2VS 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
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SK Hynix HMA851U6AFR6N-UH 4GB
内存RAM
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A-DATA Technology DDR4 2400 16GB
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Crucial Technology BL16G32C16U4B.16FE 16GB
内存RAM