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Nanya Technology M2F4G64CB8HB9N-CG 4GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB vs A-DATA Technology AO1P32NC8W1-BDAS 8GB

总分
star star star star star
Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

总分
star star star star star
A-DATA Technology AO1P32NC8W1-BDAS 8GB

A-DATA Technology AO1P32NC8W1-BDAS 8GB

差异 规格 评论

差异

Nanya Technology M2F4G64CB8HB9N-CG 4GB 需要考虑的原因
Nanya Technology M2F4G64CB8HB9N-CG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 49
    左右 51% 更低的延时
A-DATA Technology AO1P32NC8W1-BDAS 8GB 需要考虑的原因
A-DATA Technology AO1P32NC8W1-BDAS 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.5 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F4G64CB8HB9N-CG 4GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 49
  • 读取速度，GB/s
    13.2 left arrow 15.8
  • 写入速度，GB/s
    8.8 left arrow 11.5
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2301 left arrow 2673

Nanya Technology M2F4G64CB8HB9N-CG 4GB RAM的比较

Nanya Technology M2F4G64CB8HD5N-CG 4GB
Kingston 9905678-024.A00G 4GB

A-DATA Technology AO1P32NC8W1-BDAS 8GB RAM的比较

Kingston ACR512X64D3S13C9G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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takeMS International AG TMS2GB264D082-805G 2GB
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Samsung M471A2K43DB1-CTD 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS8G4D32AESTK.M8FE 8GB
Crucial Technology BLS8G4D32AESTK.M8FE 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
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G Skill Intl F4-3600C19-8GVRB 8GB
G Skill Intl F4-3600C19-8GVRB 8GB
内存RAM
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Nanya Technology M2F4G64CB8HB9N-CG 4GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
SK Hynix HMA41GU7AFR8N-TF 8GB
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Apacer Technology 78.01G86.9H50C 1GB
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内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
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内存RAM
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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Samsung M471A5644EB0-CPB 2GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
内存RAM
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A-DATA Technology AD73I1C1674EV 4GB
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Kingston K9CXF2-MIE 8GB
内存RAM
SK Hynix HYMP512U64CP8-Y5 1GB
SK Hynix HYMP512U64CP8-Y5 1GB
Corsair CM4B8G2J2133A15S 8GB
Corsair CM4B8G2J2133A15S 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-2800C14-16GVK 16GB
G Skill Intl F4-2800C14-16GVK 16GB
内存RAM