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Nanya Technology M2F4G64CB8HB9N-CG 4GB
Corsair CMR32GX4M4A2666C16 8GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB vs Corsair CMR32GX4M4A2666C16 8GB

总分
star star star star star
Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

总分
star star star star star
Corsair CMR32GX4M4A2666C16 8GB

Corsair CMR32GX4M4A2666C16 8GB

差异 规格 评论

差异

Nanya Technology M2F4G64CB8HB9N-CG 4GB 需要考虑的原因
Nanya Technology M2F4G64CB8HB9N-CG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 33
    左右 27% 更低的延时
Corsair CMR32GX4M4A2666C16 8GB 需要考虑的原因
Corsair CMR32GX4M4A2666C16 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.1 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Corsair CMR32GX4M4A2666C16 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 33
  • 读取速度，GB/s
    13.2 left arrow 16.1
  • 写入速度，GB/s
    8.8 left arrow 12.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2301 left arrow 3155

Nanya Technology M2F4G64CB8HB9N-CG 4GB RAM的比较

Nanya Technology M2F4G64CB8HD5N-CG 4GB
Kingston 9905678-024.A00G 4GB

Corsair CMR32GX4M4A2666C16 8GB RAM的比较

G Skill Intl F4-3600C16-8GTZKK 8GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
内存RAM
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Kingston 2GB-DDR2 800Mhz 2GB
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Samsung M471A2K43BB1-CRC 16GB
内存RAM
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Kingston 99U5469-045.A00LF 4GB
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Kingston 9965640-004.C00G 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
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内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
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内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
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内存RAM
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内存RAM
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AMD R5316G1609U2K 8GB
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内存RAM
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Corsair CMD16GX4M4B3600C18 4GB
内存RAM
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内存RAM
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G Skill Intl F4-3333C16-16GTZSW 16GB
内存RAM
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内存RAM
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
内存RAM