Nanya Technology M2F4G64CB8HB9N-CG 4GB vs Kingston MSI32D4S2S1ME-8 8GB

总分

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

总分

Kingston MSI32D4S2S1ME-8 8GB

Kingston MSI32D4S2S1ME-8 8GB

差异规格评论

差异

Nanya Technology M2F4G64CB8HB9N-CG 4GB

需要考虑的原因
Nanya Technology M2F4G64CB8HB9N-CG 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 32

左右 25% 更低的延时

Kingston MSI32D4S2S1ME-8 8GB

需要考虑的原因
Kingston MSI32D4S2S1ME-8 8GB

报告一个错误

更快的读取速度，GB/s

15.9 13.2

测试中的平均数值
更快的写入速度，GB/s

10.5 8.8

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Kingston MSI32D4S2S1ME-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

24 32
读取速度，GB/s

13.2 15.9
写入速度，GB/s

8.8 10.5
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2301 2733

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

G Skill Intl F4-3600C16-8GTZ 8GB

G Skill Intl F4-3600C16-8GTZ 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Corsair CMR16GX4M2C3200C16 8GB

Corsair CMR16GX4M2C3200C16 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

SK Hynix HMA41GU7AFR8N-TF 8GB

SK Hynix HMA41GU7AFR8N-TF 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Kingston 9965589-026.D00G 8GB

Kingston 9965589-026.D00G 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

G Skill Intl F4-4400C18-8GTRG 8GB

G Skill Intl F4-4400C18-8GTRG 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Samsung M47472K43DB1-CTD 16GB

Samsung M47472K43DB1-CTD 16GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

A-DATA Technology AD4S320038G22-B 8GB

A-DATA Technology AD4S320038G22-B 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Crucial Technology CT8G4SFS824A.C8FDR1 8GB

Crucial Technology CT8G4SFS824A.C8FDR1 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Avant Technology W641GU48J7240ND 8GB

Avant Technology W641GU48J7240ND 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Samsung M378A1K43DB2-CVF 8GB

Samsung M378A1K43DB2-CVF 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Crucial Technology CT16G4DFRA32A.C8FB 16GB

Crucial Technology CT16G4DFRA32A.C8FB 16GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Corsair CMWB8G1L2666A16W4 8GB

Corsair CMWB8G1L2666A16W4 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

Micron Technology 8ATF51264AZ-2G1A2 4GB