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Nanya Technology M2F4G64CB8HB9N-CG 4GB
SanMax Technologies Inc. SMD-8G28HP-21P 8GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB vs SanMax Technologies Inc. SMD-8G28HP-21P 8GB

总分
star star star star star
Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

总分
star star star star star
SanMax Technologies Inc. SMD-8G28HP-21P 8GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

差异 规格 评论

差异

Nanya Technology M2F4G64CB8HB9N-CG 4GB 需要考虑的原因
Nanya Technology M2F4G64CB8HB9N-CG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 27
    左右 11% 更低的延时
SanMax Technologies Inc. SMD-8G28HP-21P 8GB 需要考虑的原因
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
报告一个错误
  • 更快的读取速度，GB/s
    13.8 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.3 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F4G64CB8HB9N-CG 4GB
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 27
  • 读取速度，GB/s
    13.2 left arrow 13.8
  • 写入速度，GB/s
    8.8 left arrow 10.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2301 left arrow 2140

Nanya Technology M2F4G64CB8HB9N-CG 4GB RAM的比较

Nanya Technology M2F4G64CB8HD5N-CG 4GB
Kingston 9905678-024.A00G 4GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB RAM的比较

Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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