Nanya Technology M2F4G64CB8HG5N-CG 4GB vs Crucial Technology BL16G36C16U4R.M16FE1 16GB

总分

Nanya Technology M2F4G64CB8HG5N-CG 4GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB

总分

Crucial Technology BL16G36C16U4R.M16FE1 16GB

Crucial Technology BL16G36C16U4R.M16FE1 16GB

差异规格评论

差异

Nanya Technology M2F4G64CB8HG5N-CG 4GB

需要考虑的原因
Nanya Technology M2F4G64CB8HG5N-CG 4GB

报告一个错误

Crucial Technology BL16G36C16U4R.M16FE1 16GB

需要考虑的原因
Crucial Technology BL16G36C16U4R.M16FE1 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 41

左右 -58% 更低的延时
更快的读取速度，GB/s

17.7 13.3

测试中的平均数值
更快的写入速度，GB/s

14.9 8.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F4G64CB8HG5N-CG 4GB

Crucial Technology BL16G36C16U4R.M16FE1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 26
读取速度，GB/s

13.3 17.7
写入速度，GB/s

8.2 14.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1982 3692

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393A2G40DB1-CRC 16GB

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Wilk Elektronik S.A. IR2400D464L15S/8G 8GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

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Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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V-GEN D4H8GL32A8TS 8GB

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Patriot Memory (PDP Systems) 2666 C18 Series 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Kingston HP26D4U9D8ME-16X 16GB

Kingston HP26D4U9D8ME-16X 16GB